Structural and electronic properties of CuInSe2
Identifieur interne : 000668 ( Main/Exploration ); précédent : 000667; suivant : 000669Structural and electronic properties of CuInSe2
Auteurs : RBID : ISTEX:11664_1985_Article_BF02661224.pdfEnglish descriptors
Abstract
Structural investigation on monocrystalline CuInSe2 samples has been made. From the single crystal results, the space group of CuInSe2 was confirmed to be I¯42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.
DOI: 10.1007/BF02661224
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Shih</name><affiliation wicri:level="1"><mods:affiliation>Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7, Montreal, P.Q., Canada</mods:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7, Montreal, P.Q.</wicri:regionArea><wicri:noRegion>P.Q.</wicri:noRegion></affiliation></author><author><name>T. Araki</name><affiliation wicri:level="1"><mods:affiliation>Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7, Montreal, P.Q., Canada</mods:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7, Montreal, P.Q.</wicri:regionArea><wicri:noRegion>P.Q.</wicri:noRegion></affiliation><affiliation wicri:level="1"><mods:affiliation>Department of Geological Sciences, McGill University, Canada</mods:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Geological Sciences, McGill University</wicri:regionArea><wicri:noRegion>McGill University</wicri:noRegion></affiliation></author><author><name>C. H. Champness</name><affiliation wicri:level="1"><mods:affiliation>Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7, Montreal, P.Q., Canada</mods:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7, Montreal, P.Q.</wicri:regionArea><wicri:noRegion>P.Q.</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1985_Article_BF02661224.pdf</idno><date when="1985">1985</date><idno type="doi">10.1007/BF02661224</idno><idno type="wicri:Area/Main/Corpus">000A25</idno><idno type="wicri:Area/Main/Curation">000A25</idno><idno type="wicri:Area/Main/Exploration">000668</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing effects</term><term>Copper indium diselenide</term><term>Structural and electrical properties</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Structural investigation on monocrystalline CuInSe2 samples has been made. From the single crystal results, the space group of CuInSe2 was confirmed to be I¯42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="b4f3499be250ad187183984bd2bc485c26deeeec"><titleInfo lang="eng"><title>Structural and electronic properties of CuInSe2</title></titleInfo><name type="personal"><namePart type="given">A. Vahid</namePart><namePart type="family">Shahidi</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7, Montreal, P.Q., Canada</affiliation></name><name type="personal"><namePart type="given">I.</namePart><namePart type="family">Shih</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7, Montreal, P.Q., Canada</affiliation></name><name type="personal"><namePart type="given">T.</namePart><namePart type="family">Araki</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7, Montreal, P.Q., Canada</affiliation><affiliation>Department of Geological Sciences, McGill University, Canada</affiliation></name><name type="personal"><namePart type="given">C. H.</namePart><namePart type="family">Champness</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7, Montreal, P.Q., Canada</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1984-10-18</dateCreated><dateValid encoding="w3cdtf">2007-06-25</dateValid><copyrightDate encoding="w3cdtf">1985</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Structural investigation on monocrystalline CuInSe2 samples has been made. From the single crystal results, the space group of CuInSe2 was confirmed to be I¯42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.</abstract><subject lang="eng"><genre>Key words</genre><topic>Copper indium diselenide</topic><topic>structural and electrical properties</topic><topic>annealing effects</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1985</partNumber><partNumber>Volume: 14</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1985-05-01</dateIssued><copyrightDate encoding="w3cdtf">1985</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 11</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1985</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02661224</identifier><identifier type="matrixNumber">Art6</identifier><identifier type="local">BF02661224</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>297</start><end>310</end></extent></part><recordInfo><recordOrigin>AIME, 1985</recordOrigin><recordIdentifier>11664_1985_Article_BF02661224.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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